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| SM-8 DUAL PNP MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT705 C1 C1 C2 C2 PARTMARKING DETAIL T705 B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg VALUE -140 -120 -10 -4 -1 -55 to +150 UNIT V V V A A C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25C* Any single die on Both die on equally Derate above 25C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ C mW/ C C/ W C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 345 ZDT705 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE 3K 3K 3K 2K MIN. -140 -120 -10 -0.1 -10 -10 -0.1 -1.3 -2.5 -1.8 -1.7 MAX. UNIT V V V A A A A CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-120V VCB=-120V, Tamb=100C VCE=-80V VEB=-8V IC=-1A, IB=-1mA* IC=-2A, IB=-2mA* IC=-1A, IB=-10mA* IC=-1A, VCE=-5V* IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* V V V V 30K 160 Typical 90 Typical 15 Typical 0.6 Typical 0.8 Typical MHz pF pF s s Transition Frequency Input Capacitance Output Capacitance Switching Times fT Cibo Cobo ton toff IC=-100mA, VCE=-10V f=20MHz VEB=-0.5V, f=1MHz VCE=-10V, f=1MHz IC=-0.5A, VCE=-10V IB1=IB2=-0.5mA *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 346 ZDT705 TYPICAL CHARACTERISTICS -55C +25C +100C +175C IC/IB=1000 16k 14k 12k 1.8 1.6 +100C +25C -55C VCE=-5V VCE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.001 0.01 0.1 1 10 20 hFE - Gain 10k 8k 6k 4k 2k 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 1.8 1.6 -55C +25C +100C +175C 2.4 IC/IB=1000 2.2 2.0 -55C +25C +100C VCE=-5V VBE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.001 0.01 0.1 1 10 20 VBE - (Volts) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 3 - 347 |
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